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| schottky barrier diode features z low forward voltage drop z guard ring construction for transi ent protection z high conductance - z also available in lead free version marking: B0520LW:sd b0530w: se b0540w: sf maximum ratings @t a =25 parameter symbol B0520LW b0530w b0540w unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 v rms reverse voltage reverse voltage (dc) v r(rms) 14 21 28 v average rectified output current i o 0.5 a forward current surge peak i fsm 5.5 a power dissipation p d 50 0 mw thermal resistance junction to ambient r ja 250 /w junction temperature t j 150 storage temperature t stg -65~+150 voltage rate of change dv/dt 1000 v/ s electrical characteristics @t a =25 parameter symbol B0520LW b0530w b0540w unit conditions 20 -- -- i r =250 a -- 30 -- i r =200 a minimum reverse breakdown voltage v (br)r -- -- 40 v i r =20 a v f1 0.3 2 0 0.375 -- i f =0.1a v f2 0.385 0.430 0.510 i f =0.5a forward voltage v f3 -- -- 0.62 v i f =1a i r1 75 -- -- v r =10v reverse current i r2 -- 20 -- a v r =15v i r3 250 -- 10 v r =20v i r4 -- 130 -- v r =30v reverse current i r5 -- -- 20 a v r =40v capacitance between terminals c t -- -- 170 pf v r =0,f=1mhz sod-123 B0520LW/b0530w/b0540w 1 date:2011/05 www.htsemi.com semiconductor jinyu +
typical characteristics B0520LW/b0530w/b0540w 2 date:2011/05 www.htsemi.com semiconductor jinyu |
Price & Availability of B0520LW
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